Photothermal Metrology Researcher

Photothermal Metrology Researcher

PREP0004458

Project Description:

Semiconductor technologies are critical to U.S. economic and national security. Further innovation in microelectronics depends on the successful integration of heterogeneous materials and devices through advanced packaging which require precise knowledge of thermal properties of materials and interfaces. Therefore, novel metrology for mapping thermal properties with unprecedented resolution, precision, and throughput is critically needed to accelerate semiconductor materials and devices R&D. To answer this need, the Nanoscale Device Characterization Division (NDCD) at NIST is developing a high throughput (≈ 5 μs/pixel) wide bandwidth (5GHz) photothermal microscope to measure the thermal properties of materials with ≈ 500 nm spatial resolution. 

The NIST CHIPS Metrology Program is seeking a motivated postdoctoral researcher to conduct experimental and theoretical research alongside NIST scientists to advance NIST photothermal microscope and to develop suitable analytical thermal models for extracting thermal properties (e.g., thermal conductivity and interfacial thermal conductance) from measured data, as a function of sample geometry and boundary conditions. The candidate will apply this novel metrology to map thermal properties and composition of materials, interfaces, and devices in support of a broad range of semiconductor applications, with efforts balanced as a function of the candidate’s expertise and interests. The CHIPS Metrology Program at NIST advances metrology for accelerating R&D and for developing breakthroughs that support the development of the next-generation microelectronics and ensure the competitiveness and leadership of the United States. The development and advancement of new measurement methods and infrastructure to characterize nanoscale engineered materials and devices is a critical part of the CHIPS metrology and NDCD mission.

Key Responsibilities: 

• Operate and plan experiments for the new NIST photothermal microscope
• Develop suitable thermal models to extract thermal properties and their uncertainties from large time-domain photo-thermalization datasets based on the sample geometry under analysis and its boundary conditions
• Engineer suitable sample and device geometries that conveniently parametrize the sample thermalization response as a function of the sample dimensions to extract thermal properties with high precision
• Map thermal conductivity, interfacial thermal conductance and chemical composition of materials and devices with high spatial resolution and throughput
• Analyze and fit large (>500 GB) photothermal datasets
• Report on research results through normal scientific channels including presentations and journal articles

Desired Qualifications: 

• U.S. Citizen Preferred
• Ph.D. in physics, engineering, materials science, computational mechanics or related disciplines
• 3 years of relevant experience in thermal/photothermal metrology
• 5 years of relevant experience in thermal modelling
• 3 years of experience in the analysis of large datasets (> 500 GB) or multivariate analysis.
• 1 year of experience in fitting time-domain sample photothermal thermalization traces to extract thermal properties
• Expertise and knowledge in semiconductor materials and packaging may also be useful. 
• Candidates with a broad and multidisciplinary background are particularly encouraged to apply
• Strong oral and written communication skills

Other Details:

• Full-time: the participant is expected to work 40 hours a week
• Location: the participant will work at the NIST Gaithersburg Campus.
• Duration: this is expected to be a one-year position. Extensions are sometimes granted depending on the availability of funds.